Toshiba Releases 650V Super Junction Power MOSFETs in TOLL Package that Help Improve Efficiency of High Current Equipment. Toshiba Electronic Devices & Storage Corporation Announces Major Investment in Power Devices Business. Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package. Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package. Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package.

1. Sic Mosfet 650v
2. 650v Gan Mosfet
3. Mosfet 650v 20a

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : SVF7N65F, SVF7N65T

Function : 650V, 7A, N-CHANNEL MOSFET Transistor

Package : TO-220F, TO-220 Type

Manufactures : Silan Microelectronics

Images :

Description :

SVF7N65T / SVF7N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

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Features

1. 7A,650V,RDS(on)(typ)=1.1 Ω @VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

Pinout

Sic Mosfet 650v

Absolute Maximum Ratings (Tc = 25°C)

650v Gan Mosfet

1. Drain-Source Voltage : VDS = 650 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : Id = 7 A
4. Power Dissipation : 46 W
5. Channel temperature : Tch = -55 to +150 °C
6. Storage temperature : Tstg = -55 to +150 °C

SVF7N65F Datasheet

Mosfet 650v 20a

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